Add to ORKGIn this paper, we investigate by simulation and by evaluation of experimental data the feasibility of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect-transistor (FET) structure which is based on our already published Si-nanowire (SiNW) technology. The key technology for this dual-gated general purpose FET contains Schottky S/D junctions on a silicon-on-insulator (SOI) platform. In combination with electrostatic doping and a dual-gate configuration, the Schottky junctions significantly increase the temperature robustness of the device
AbstractSilicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
In this paper, we present experimental results and simulation data of an electrostatically doped and...
In the last 50 years, our economy and society have obviously been influenced and shaped to a great e...
In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated...
In recent years, silicon nanowires (SiNW) have generated great interest for the fabrication of nanom...
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) w...
International audiencePolycrystalline silicon nanowires (poly-SiNWs) are synthesized using side wall...
This invention describes a novel electronic device consisting of one-or more-vertically stacked gate...
A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effe...
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been f...
International audienceWe report on the electronic transport properties of multiple-gate devices fabr...
Abstract — Gate semi-around silicon nanowire (SiNW) FETs have been fabricated and their electrical c...
International audienceIn this letter, we report the fabrication and the electrical characterization ...
AbstractSilicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
In this paper, we present experimental results and simulation data of an electrostatically doped and...
In the last 50 years, our economy and society have obviously been influenced and shaped to a great e...
In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated...
In recent years, silicon nanowires (SiNW) have generated great interest for the fabrication of nanom...
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) w...
International audiencePolycrystalline silicon nanowires (poly-SiNWs) are synthesized using side wall...
This invention describes a novel electronic device consisting of one-or more-vertically stacked gate...
A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effe...
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been f...
International audienceWe report on the electronic transport properties of multiple-gate devices fabr...
Abstract — Gate semi-around silicon nanowire (SiNW) FETs have been fabricated and their electrical c...
International audienceIn this letter, we report the fabrication and the electrical characterization ...
AbstractSilicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...