Add to ORKGAbstract. The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature range of 200-300°C. The influence of electric field during heat treatment has also been studied. The simple variations in I-V characteristics with annealing time have been utilized to interpret the contact behaviour. 1
A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenome...
GaN Schottky diodes were exposed to N<sub>2</sub> or H<sub>2</sub> Inductively Coupled Plasmas prior...
The present paper reports on a trial to shed further light on the characterization, applications, an...
The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature ...
Measurements are reported which provide direct evidence of the relationship between the frequency-te...
This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diod...
This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has...
This paper reports on the characteristic changes of Au/GaxIn 1-xSb thermocompressed Gunn diodes afte...
The reasons for frequency variation with temperature in X-band Gunn diodes have been examined theore...
The thesis examines the DC and RF performance of double transit region Gunn diodes (DTGD) grown by m...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
Previous work on the reverse current-voltage characteristics of Ge point contact diodes has shown th...
The effect of the edge of the channel on the operation of planar Gunn diodes has been examined using...
Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated a...
A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenome...
GaN Schottky diodes were exposed to N<sub>2</sub> or H<sub>2</sub> Inductively Coupled Plasmas prior...
The present paper reports on a trial to shed further light on the characterization, applications, an...
The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature ...
Measurements are reported which provide direct evidence of the relationship between the frequency-te...
This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diod...
This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has...
This paper reports on the characteristic changes of Au/GaxIn 1-xSb thermocompressed Gunn diodes afte...
The reasons for frequency variation with temperature in X-band Gunn diodes have been examined theore...
The thesis examines the DC and RF performance of double transit region Gunn diodes (DTGD) grown by m...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
Previous work on the reverse current-voltage characteristics of Ge point contact diodes has shown th...
The effect of the edge of the channel on the operation of planar Gunn diodes has been examined using...
Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated a...
A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenome...
GaN Schottky diodes were exposed to N<sub>2</sub> or H<sub>2</sub> Inductively Coupled Plasmas prior...
The present paper reports on a trial to shed further light on the characterization, applications, an...