Doctor of Philosophy The measurement, design, and theory of ultralow-noise actively modelocked lasers are presented. We demonstrate quantum-limited noise performance of a hybridly modelocked semiconductor laser with an rms timing jitter of only 47 fs (10 Hz to 10 MHz) and 86 fs (10 Hz to 4.5 GHz). The daunting task of measuring ultralow-noise levels is solved by a combined use of microwave and optical measurement techniques that yield complete characterization of the laser noise from DC to half the laser repetition rate. Optical cross-correlation techniques are shown to be a useful tool for quantifying fast noise processes, isolating the timing jitter noise component, measuring timing jitter asymmetries, and measuring correlations of pulses...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
External-cavity, actively-modelocked semiconductor diode lasers (SDLs) have proven to be attractive ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Electric-field correlation measurements of fundamental and harmonic modelocked external cavity semic...
A numerical model for the calculation of noise spectra of actively or passively mode-locked lasers h...
To the knowledge of the authors, the first amplitude moduation (AM) and phase modulation (PM) noise ...
We report the measurement of electric field correlations of a hybridly modelocked external linear ca...
Modelocking is a common technique employed to produce ultrashort optical pulses from lasers over a w...
The measurements of amplitude modulation (AM) and residual phase modulation (PM) noise for a 10 GHz ...
A novel approach to residual jitter measurement examines the intensity crosscorrelation generated by...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
The lowest noise characteristics for an actively-modelocked external-cavity semiconductor diode lase...
This work present a comprehensive discussion of the noise properties of mode-locked lasers, with an ...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
External-cavity, actively-modelocked semiconductor diode lasers (SDLs) have proven to be attractive ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Electric-field correlation measurements of fundamental and harmonic modelocked external cavity semic...
A numerical model for the calculation of noise spectra of actively or passively mode-locked lasers h...
To the knowledge of the authors, the first amplitude moduation (AM) and phase modulation (PM) noise ...
We report the measurement of electric field correlations of a hybridly modelocked external linear ca...
Modelocking is a common technique employed to produce ultrashort optical pulses from lasers over a w...
The measurements of amplitude modulation (AM) and residual phase modulation (PM) noise for a 10 GHz ...
A novel approach to residual jitter measurement examines the intensity crosscorrelation generated by...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
The lowest noise characteristics for an actively-modelocked external-cavity semiconductor diode lase...
This work present a comprehensive discussion of the noise properties of mode-locked lasers, with an ...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
External-cavity, actively-modelocked semiconductor diode lasers (SDLs) have proven to be attractive ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...