Abstract- In this work we are going to exploit k.p perturbation theory for calculation of momentum matrix elements and energy eigenvalue of semiconductors in general, and calculate the Ec & Ev the energy on conduction band and valence band respectively. Finally, we formulate the energy spectrum energy for II-VI material using the relation between the reduce mass μ* and the unperturbed band gap Eg0. Keywords- II–VI materials; Narrow gap semiconductor; The k.p perturbation theory. I
\u3cp\u3eWe compare a variety of approximation schemes, all predicting the excitation structure of a...
The basis for discussing transport in semiconductors is the underlying electronic band structure of ...
Progress in the first-principles calculation of electron excitation energies in solids is discussed....
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
Empirical formulae are obtained relating the direct band-gap energy of semiconductors and the mean a...
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calcu...
A strain Hamiltonian Hst, associated with a sps * k. p Hamiltonian Hkp, is used to describe the vale...
How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–...
How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
Chapter I: We show that the surface arrangement of atoms in a solid controls the energetically slowl...
The surface arrangement of atoms in a solid controls the energetically slowly varying features of a ...
Chapter I: We show that the surface arrangement of atoms in a solid controls the energetically slowl...
This book presents a detailed exposition of the formalism and application of k.p theory for both bul...
\u3cp\u3eWe compare a variety of approximation schemes, all predicting the excitation structure of a...
The basis for discussing transport in semiconductors is the underlying electronic band structure of ...
Progress in the first-principles calculation of electron excitation energies in solids is discussed....
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
Empirical formulae are obtained relating the direct band-gap energy of semiconductors and the mean a...
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calcu...
A strain Hamiltonian Hst, associated with a sps * k. p Hamiltonian Hkp, is used to describe the vale...
How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–...
How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
Chapter I: We show that the surface arrangement of atoms in a solid controls the energetically slowl...
The surface arrangement of atoms in a solid controls the energetically slowly varying features of a ...
Chapter I: We show that the surface arrangement of atoms in a solid controls the energetically slowl...
This book presents a detailed exposition of the formalism and application of k.p theory for both bul...
\u3cp\u3eWe compare a variety of approximation schemes, all predicting the excitation structure of a...
The basis for discussing transport in semiconductors is the underlying electronic band structure of ...
Progress in the first-principles calculation of electron excitation energies in solids is discussed....