Add to ORKGThis work studies the SiGe SRB and tCESL strained triple-gate SOI nMOSFETs using experimental devices and also process and device numerical simulations. The transconductance and mobility are investigated and analyzed with the strain data obtained from process simulations, including the influence of the fin dimensions on the strain. The use of SiGe SRB and tCESL strain combined resulted in higher strain and higher maximum transconductance
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
Strain is often applied in semiconductor technology to improve the device performance in a field eff...
Unstrained and strained triple-gate SOI devices under different strain techniques are studied experi...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
[[abstract]]The tensile strained Si, based on the misfit between Si and SiGe gives higher speed and ...
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the w...
Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising p...
Multiple gate devices provides short channel effects reduction, been considered promising for sub 20...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the na...
The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the na...
his study combines direct measurements of strain, electrical mobility measurements, and a rigorous m...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
Strain is often applied in semiconductor technology to improve the device performance in a field eff...
Unstrained and strained triple-gate SOI devices under different strain techniques are studied experi...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
[[abstract]]The tensile strained Si, based on the misfit between Si and SiGe gives higher speed and ...
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the w...
Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising p...
Multiple gate devices provides short channel effects reduction, been considered promising for sub 20...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the na...
The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the na...
his study combines direct measurements of strain, electrical mobility measurements, and a rigorous m...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
Strain is often applied in semiconductor technology to improve the device performance in a field eff...