Add to ORKGA short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn-based III-V and II-VI diluted magnetic semiconductors and their nanostructures. The tailoring of domain structures and magnetic anisotropy by strain engineering and confinement is described. Experiments demonstrating the tunability of TC by light and electric field are presented.
Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a gre...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
For decades, ferromagnetic semiconductors have captured the scientific community's interest, harness...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated s...
The prospect of a new generation of electronic devices based on the fundamental quantum property of ...
Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in ...
This review compiles results of experimental and theoretical studies on thin films and quan-tum stru...
We describe experiments which study static and dynamic aspects of Mn spin organization in magnetic s...
Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors s...
A brief overview is given on selected effects of the exchange coupling between effective mass electr...
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of e...
The body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s ...
Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a gre...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
For decades, ferromagnetic semiconductors have captured the scientific community's interest, harness...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn...
The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated s...
The prospect of a new generation of electronic devices based on the fundamental quantum property of ...
Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in ...
This review compiles results of experimental and theoretical studies on thin films and quan-tum stru...
We describe experiments which study static and dynamic aspects of Mn spin organization in magnetic s...
Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors s...
A brief overview is given on selected effects of the exchange coupling between effective mass electr...
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of e...
The body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s ...
Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a gre...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
For decades, ferromagnetic semiconductors have captured the scientific community's interest, harness...