We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric fields. To simulate the dy-namics of electrons in the bulk, by taking into account the main details of band structure, scattering processes, as well as heating effects, a Monte Carlo approach is used. The noise properties are investigated by computing the velocity fluctuations correlation function, its spectral density, and the total noise power for different values of the amplitude and frequency of the driving field. We show that the noise features are significantly affected by the electric field amplitude and frequency and discuss their peculiari-ties in comparison with those exhibited in the static field case. We find the integrated spectr...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-dope...
We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric ...
We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric ...
The sensitivity of semiconductor based circuits is strongly affected by the presence of intrinsic no...
The sensitivity of semiconductor based circuits is strongly affected by the presence of intrinsic no...
The results of a study concerning the intrinsic noise in low-doped n-type InP crystals operating und...
The results of a study concerning the intrinsic noise in low-doped n-type InP crystals operating und...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped...
Studies concerning the constructive aspects of noise and fluctuations in different non-linear system...
Studies concerning the constructive aspects of noise and fluctuations in different non-linear system...
A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed...
A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-dope...
We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric ...
We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric ...
The sensitivity of semiconductor based circuits is strongly affected by the presence of intrinsic no...
The sensitivity of semiconductor based circuits is strongly affected by the presence of intrinsic no...
The results of a study concerning the intrinsic noise in low-doped n-type InP crystals operating und...
The results of a study concerning the intrinsic noise in low-doped n-type InP crystals operating und...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped...
Studies concerning the constructive aspects of noise and fluctuations in different non-linear system...
Studies concerning the constructive aspects of noise and fluctuations in different non-linear system...
A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed...
A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk embedded in ...
We investigate the modification of the intrinsic carrier noise spectral density induced in low-dope...