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InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
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To fulfill the increasing demand for high-speed electronics used for computation or communication is...
High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (\(L_{ch}\)) down...
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InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
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kinked nanowire transistor probes for targeted intracellular recording in three dimensions (Article ...
Nanowire electrodes for high-density stimulation and measurement of neural circuits (Article begins ...
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InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
To fulfill the increasing demand for high-speed electronics used for computation or communication is...
High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (\(L_{ch}\)) down...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
kinked nanowire transistor probes for targeted intracellular recording in three dimensions (Article ...
Nanowire electrodes for high-density stimulation and measurement of neural circuits (Article begins ...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowi...
(Article begins on next page) The Harvard community has made this article openly available. Please s...
To fulfill the increasing demand for high-speed electronics used for computation or communication is...