Synthesis and Characterization of Nanowires Zinc Oxide with Different Temperatures

Zinc oxide nano wire have been produced by simple thermal way heating Zn powder on alumina substrate at different temperatures from 600°C to 1000°C in furnace for a time period of 30 minutes under oxygen gas environment. The prepared samples were characterized by different characterizing techniques, scanning electron microscopy (SEM), X- ray Diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), UV-Visible spectroscopy.In all photographs it is clearly seen that the growth of nano wires is initiated at outer surface of the ZnO porous grains. The growth is clearly started at the edge of the surface.The XRD characterization confirms the wurtzite hexagonal structure of synthesized zinc oxide. The band gap of synthesized semiconductor Zinc Oxide is increased rather than the bulk Zinc Oxide