Add to ORKGTo minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350–11...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. O...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350–11...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments a...
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. O...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...