A V-band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

Abstract — In this paper, a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology is presented. The divider is implemented in a 0.13-μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 14.8 % at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is-127.76 dBc/Hz at 1-MHz offset. The output power of the divider is higher than-9 dBm from 53 to 61 GHz, and a good figure of merit (FOM) of 2.19 is achieved. Index Terms —CMOS, forward body-biasing, injection-locked frequency divider (ILFD), low supply voltage, phase-locked loop