Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO(2) (mp-TiO(2)) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140 nm wavelength and could process signals up to 1 kHzclose1