One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at te...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
Photodetection at short- and mid-wavelength infrared (SWIR and MWIR) enables various sensing systems...
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated i...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼...
There is considerable interest in the development of InAs(Sb) nanowires for infrared photonics due t...
Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was ac...
This dissertation details the use of silicon as near- infrared photodetectors based on two different...
Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly...
We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet l...
High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded ...
Development of heteroepitaxy growth of catalyst-free vertical III–V nanowires on Si wafers is highly...
We report the use of black silicon (bSi) as a growth platform for III–V nanowires (NWs), which enabl...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
Photodetection at short- and mid-wavelength infrared (SWIR and MWIR) enables various sensing systems...
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated i...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼...
There is considerable interest in the development of InAs(Sb) nanowires for infrared photonics due t...
Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was ac...
This dissertation details the use of silicon as near- infrared photodetectors based on two different...
Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly...
We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet l...
High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded ...
Development of heteroepitaxy growth of catalyst-free vertical III–V nanowires on Si wafers is highly...
We report the use of black silicon (bSi) as a growth platform for III–V nanowires (NWs), which enabl...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
Photodetection at short- and mid-wavelength infrared (SWIR and MWIR) enables various sensing systems...
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g...