We study the atomic structure and the electronic and optical properties of Ge(2)Sb(2)Te(5) in two different crystalline states of cubic and hexagonal structures with the use of ab initio pseudopotential density functional method. It is found that electronic and atomic structures are very sensitive to the layer sequence in the two phases. The proximity of vacancy layer to Ge layer leads to the splitting of Ge-Te bond length, which, in turn, affects the electronic and optical properties. The effect of Te d orbitals is also investigated with respect to structural propertiesopen181
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
We use ab initio density functional theory calculations to understand the electronic, dynamical, and...
Ge–Sb–Te (“GST”) alloys are leading phase-change materials for digital memories and neuro-inspired c...
We study the atomic structure and the electronic and optical properties of Ge(2)Sb(2)Te(5) in two di...
Ge2Sb2Te5 (GST) is a technologically important phase-change material for data storage, where the fas...
The amorphous, liquid and crystalline phases of the phase change material Ge(2)Sb(2)Te(5) (GST) have...
The mechanism for the fast switching between amorphous, metastable, and crystalline structures in ch...
Pseudo-binary phase change materials such as (GeTe)n/(Sb2Te3)m have been recently considered for the...
Electronic structure calculations are presented for various model structures of the crystalline and ...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
The fast and reversible phase transition mechanism between crystalline and amorphous phases of Ge(2)...
In this work the correlation between structural, electronic and optical properties of so-called phas...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
We present a comprehensive computational study on the properties of rock salt-like and hexagonal cha...
Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importan...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
We use ab initio density functional theory calculations to understand the electronic, dynamical, and...
Ge–Sb–Te (“GST”) alloys are leading phase-change materials for digital memories and neuro-inspired c...
We study the atomic structure and the electronic and optical properties of Ge(2)Sb(2)Te(5) in two di...
Ge2Sb2Te5 (GST) is a technologically important phase-change material for data storage, where the fas...
The amorphous, liquid and crystalline phases of the phase change material Ge(2)Sb(2)Te(5) (GST) have...
The mechanism for the fast switching between amorphous, metastable, and crystalline structures in ch...
Pseudo-binary phase change materials such as (GeTe)n/(Sb2Te3)m have been recently considered for the...
Electronic structure calculations are presented for various model structures of the crystalline and ...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
The fast and reversible phase transition mechanism between crystalline and amorphous phases of Ge(2)...
In this work the correlation between structural, electronic and optical properties of so-called phas...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
We present a comprehensive computational study on the properties of rock salt-like and hexagonal cha...
Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importan...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
We use ab initio density functional theory calculations to understand the electronic, dynamical, and...
Ge–Sb–Te (“GST”) alloys are leading phase-change materials for digital memories and neuro-inspired c...