We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulationsclose49454
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor...
The growth direction of nanowires is critically important for precisely controlling their physical a...
The production of nanowire materials, uniformly oriented along any arbitrarily chosen crystal orient...
Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowi...
Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substr...
Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowi...
Growth of III-V nanowires on the [100]-oriented industry standard substrates is critical for future ...
International audienceWell-aligned GaN nanowires are promising candidates for building high-performa...
Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending ...
ZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-bea...
Growth of III–V nanowires on the [100]-oriented industry standard substrates is critical for future ...
Chemical methods offer the possibility to synthesize a large panel of nanostructures of various mate...
Chemically grown semiconducting nanowire is a promising candidate for future electronics since this ...
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor...
The growth direction of nanowires is critically important for precisely controlling their physical a...
The production of nanowire materials, uniformly oriented along any arbitrarily chosen crystal orient...
Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowi...
Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substr...
Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowi...
Growth of III-V nanowires on the [100]-oriented industry standard substrates is critical for future ...
International audienceWell-aligned GaN nanowires are promising candidates for building high-performa...
Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending ...
ZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-bea...
Growth of III–V nanowires on the [100]-oriented industry standard substrates is critical for future ...
Chemical methods offer the possibility to synthesize a large panel of nanostructures of various mate...
Chemically grown semiconducting nanowire is a promising candidate for future electronics since this ...
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor...
The growth direction of nanowires is critically important for precisely controlling their physical a...
The production of nanowire materials, uniformly oriented along any arbitrarily chosen crystal orient...