Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy
- Ding, Y
- Park, Kibog
- Pelz, JP
- Palle, KC
- Mikhov, MK
- Skromme, BJ
Publication date
November 2015
DOI Publisher
American Vacuum Society Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsAbstract
Using ballistic electron emission microscopy (BEEM), high-temperature- processing-induced 'double-stacking fault' cubic inclusions in 4H-Si-C were studied. BEEM is a three-terminal extension of scanning tunneling microscopy (STM) that can probe the local electronic transport properties of M/S interfaces with nanometer-scale spatial resolution and <10 meV energy resolution. It was found that measured spatial variations in the BEEM current were related to the inclusion orientation and local surface step structure. The observation of anomalously low schottky barrier height (SBH) suggested the existence of a triple-or quadruple-stacking fault inclusion.open3
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