the interface of silicon-dioxide on silicon

ii In this thesis, the ripple formation at the interface of SiO2 and Si were studied in a systematic fashion by irradiating the SiO2-Si samples with ultrashort laser pulses under a broad variety of experimental conditions. They consist of di↵erent irradiating laser wavelengths, incident laser energies, translation speeds, translation directions, spot sizes of the laser beam, as well as oxide thicknesses. The ripples produced by laser irradiation are examined using various microscopy techniques in order to characterize their surface morphology, detailed structures, crystalline properties, and so on. For the experiments carried out at = 800 nm, the ripples formed on the SiO2-Si sample with an oxide thickness of 216 nm were first observed under optical microscopy and SEM. After removing the oxide layer with HF solution, the surface features of the ripples on the Si substrate were investigated using SEM and AFM techniques. Subsequently, by means of TEM and EDX analysis, the material composition and crystallinity of the ripples were determined. It is concluded that the ripples ar