Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 ??C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.open586