Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.close0