Requirements For The Emerging Memory Era

As current computing system is changing to cope with the exponential growth of data, memory device in the near future should be able to provide huge memory capacity with lower power consumption; changes stem not only from computing system architecture, but from memory hierarchy. However, conventional charge-based memories such as DRAM and FG NAND Flash memory have difficulties in scaling due to the limited number of charges. Therefore, lots of researchers are currently working on emerging memory devices for the future computing system. In this paper we introduce emerging memory devices such as Phase Change RAM (PCRAM), Spin-Transfer Torque MRAM (STT-MRAM), and Resistance change RAM (ReRAM). We discuss the characteristics and scalability of each memory device and summarize the requirements to open the era of emerging memory