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GaAs-substrate-based long-wave active materials with type-II band alignments

Publication date

January 2001

DOI

10.1116/1.1386380

Publisher

American Vacuum Society

ISSN

0734-211X

Language

English

Citation count (estimate)

14

Abstract

Copyright 2001 American Vacuum Society. Link to the original site http://scitation.aip.org/content/avs/journal/jvstb/19/4/10.1116/1.138638

Extracted data

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Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

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Copyright 2012 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

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Copyright 2000 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

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Copyright 1999 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/75/9/...

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Copyright 2006 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

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Copyright 2012 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

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January 2004

Copyright 2004 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

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January 2013

Copyright 2013 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/102/4...

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January 2012

Copyright 2012 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/jap/112/3...

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January 2011

Copyright 2011 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/99/7/...

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

January 2013

Copyright 2013 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/102/7...

Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy

January 2012

Copyright 2012 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...

Design Analysis of 1550-nm GaAsSb–(In)GaAsN Type-II Quantum-Well Laser Active Regions

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Luke J. Mawst
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Abstract—A novel active region design is proposed to achieve long-wavelength ( = 1550-nm) diode las...