We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated C...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
This paper presents the measured performance of different photodetector (PD) structures in a standar...
An optical receiver using a CMOS-compatible avalanche photodetector (CMOS-APD) is demon-strated. The...
Abstract—This paper describes an optical receiver with mono-lithically integrated photodetector in 0...
This paper presents an integrated optical receiver which consists of an integrated photodetector, an...
Abstract- This paper presents an integrated optical receiver which consists of an integrated photode...
A high-speed optical interface circuit for 850-nm optical communication is presented. Photodetector,...
© 2018 IEEE. This paper presents an optical receiver in 40 nm bulk CMOS for 1310 and 1550 nm light, ...
The design and measurement of a high-speed optical receiver is presented. The intrisically low speed...
As computing systems and communication networks grow more complex, so is the need for higher bandwi...
We introduce the world's first, high-speed optical receiver using Ge waveguide photodetectors monoli...
We introduce the world's first, high-speed optical receiver using Ge waveguide photodetectors monoli...
A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technolog...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
This paper presents the measured performance of different photodetector (PD) structures in a standar...
An optical receiver using a CMOS-compatible avalanche photodetector (CMOS-APD) is demon-strated. The...
Abstract—This paper describes an optical receiver with mono-lithically integrated photodetector in 0...
This paper presents an integrated optical receiver which consists of an integrated photodetector, an...
Abstract- This paper presents an integrated optical receiver which consists of an integrated photode...
A high-speed optical interface circuit for 850-nm optical communication is presented. Photodetector,...
© 2018 IEEE. This paper presents an optical receiver in 40 nm bulk CMOS for 1310 and 1550 nm light, ...
The design and measurement of a high-speed optical receiver is presented. The intrisically low speed...
As computing systems and communication networks grow more complex, so is the need for higher bandwi...
We introduce the world's first, high-speed optical receiver using Ge waveguide photodetectors monoli...
We introduce the world's first, high-speed optical receiver using Ge waveguide photodetectors monoli...
A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technolog...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
The objective of this work was to integrate an optical receiver in a modern standard technology in ...
This paper presents the measured performance of different photodetector (PD) structures in a standar...