International audienceBecause of remarkable properties of InGaN, we simulated and optimized an InGaN-based dual-junction solar cell connected by a specifically designed tunnel junction. The device is simulated in the framework of a drift-diffusion model using the ATLAS device simulation framework from the Silvaco company. The optimization is done by coupling ATLAS with multivariate mathematical optimization methods based on state-of-the-art optimization algorithms. For that, we used a Python package that we developed in the SAGE software interface. The objective is to optimize the conversion efficiency of the solar cell by simultaneously optimizing several physical and geometrical parameters of the solar cell. It is an unprecedented multiva...
In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is present...
International audienceThe performance of a double heterojunction solar cell based on Indium Gallium ...
International audienceOn the road towards next generation high efficiency solar cells, the ternary I...
International audienceBecause of remarkable properties of InGaN, we simulated and optimized an InGaN...
International audienceNitride-based semiconductor materials are promising candidates for the manufac...
L’alliage de Nitrure de Gallium et d’Indium (InGaN) est devenu au cours des dernières années un semi...
The design and optimization of novel structures is an essential part of the next-generation solar ce...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
International audienceA detailed investigation on the performance of an InGaN-based double-junction ...
In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the r...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
International audienceThe Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potential...
In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is present...
International audienceThe performance of a double heterojunction solar cell based on Indium Gallium ...
International audienceOn the road towards next generation high efficiency solar cells, the ternary I...
International audienceBecause of remarkable properties of InGaN, we simulated and optimized an InGaN...
International audienceNitride-based semiconductor materials are promising candidates for the manufac...
L’alliage de Nitrure de Gallium et d’Indium (InGaN) est devenu au cours des dernières années un semi...
The design and optimization of novel structures is an essential part of the next-generation solar ce...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
International audienceA detailed investigation on the performance of an InGaN-based double-junction ...
In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the r...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
International audienceThe Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potential...
In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is present...
International audienceThe performance of a double heterojunction solar cell based on Indium Gallium ...
International audienceOn the road towards next generation high efficiency solar cells, the ternary I...