Positron Annihilation in IR Transmitting GeS2-Ga2S3 Glasses

International audiencePositron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS2-Ga2S3 glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses