Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Munteanu, Daniela
Autran, Jean-Luc

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Publication date

December 2012

DOI

10.1109/TNS.2012.2221740

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

International audienceThe response to heavy-ion irradiation of FinFET and Multi-Channel Nanowire MOSFET (MC-NWFET) operated with independent gates is investigated by 3-D numerical simulation. The bipolar amplification and charge collection of devices with independent gates are particularly investigated and compared to those of conventional devices having a single surrounding gate. We show that the independent-gate operation of both FinFET and MC-NWFET degrades the device immunity to heavy-ion irradiation

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Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Abstract

Extracted data

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Abstract

Extracted data

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