Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

International audienceThis paper presents the analysis of pulse quenching effects induced in silicon-on-insulator (SOI) technology. Simulation results emphasize the need to consider multi-collection effects in the occurrence mechanisms of single event transients (SET) in very large scaling integration (VLSI) components even with SOI technologies, which is known to be initially less sensitive to soft errors (SE). The impacts of gate-to-gate spacing and voltage scaling on the SET occurrence and characteristics have been highlighted. The simulations have been performed with the soft error prediction tool MUSCA SEP3 developed for digital complementary metal oxide semiconductor (CMOS) technologies (SOI, Bulk)