International audienceThe electron transport in silicon at low and very low energy (10 eV-2 keV) is investigated with a Monte Carlo code. The elastic scattering with nuclei is described by Mott's model of partial waves, whereas the inelastic collisions with electrons are described by the complex dielectric function theory. The code has been validated by means of comparison with electron emission yields (EEY) and energy loss spectra experimentally measured in ultrahigh vacuum on an Ar-etched sample. Electron emission yields, practical ranges, and ionizing doses are presented for electrons in silicon down to 10 eV
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
International audienceThe Secondary Electron Emission (SEE) process plays an important role in the p...
Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons w...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
Theoretical data for positron scattering from a thin silicon film and semi-infinite silicon are pres...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A Monte Carlo (MC) simulation is described and used to calculate the energy distribution spectra of ...
International audienceA Monte-Carlo code has been developed for the transport of low energy electron...
An advanced model for impact ionization for electrons is si is presented and implemented in a Monte ...
A Monte Carlo approach to electron-electron scattering in silicon suitable to device analysis is pre...
A Monte Carlo procedure to simulate the penetration and energy loss of low¿energy electron beams thr...
In this work, a Monte Carlo simulation code for the electron-beam propagation was developed using th...
International audienceHigh energy interaction of heavy ions with silicon integrated circuits contrib...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
International audienceThe Secondary Electron Emission (SEE) process plays an important role in the p...
Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons w...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
Theoretical data for positron scattering from a thin silicon film and semi-infinite silicon are pres...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A Monte Carlo (MC) simulation is described and used to calculate the energy distribution spectra of ...
International audienceA Monte-Carlo code has been developed for the transport of low energy electron...
An advanced model for impact ionization for electrons is si is presented and implemented in a Monte ...
A Monte Carlo approach to electron-electron scattering in silicon suitable to device analysis is pre...
A Monte Carlo procedure to simulate the penetration and energy loss of low¿energy electron beams thr...
In this work, a Monte Carlo simulation code for the electron-beam propagation was developed using th...
International audienceHigh energy interaction of heavy ions with silicon integrated circuits contrib...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
International audienceThe Secondary Electron Emission (SEE) process plays an important role in the p...
Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons w...
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