Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65nm SRAM irradiated with neutrons, protons and heavyions.peerReviewe
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
International audienceIn previous works, we have demonstrated the importance of dynamic mode testing...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim o...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
Instruments operating in particle accelerators and colliders are exposed to radiations that are comp...
A simple statistical theory of radiation damage of semiconductor memory has been constructed. The...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
Embedded processors had been established as common components in modern systems. Usually, they are p...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
[[abstract]]The research is based on the nuclear radiation induced soft error phenomenon associated ...
This study analyses the response of synchronous dynamic random access memories to neutron irradiatio...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
International audienceIn previous works, we have demonstrated the importance of dynamic mode testing...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim o...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
Instruments operating in particle accelerators and colliders are exposed to radiations that are comp...
A simple statistical theory of radiation damage of semiconductor memory has been constructed. The...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
Embedded processors had been established as common components in modern systems. Usually, they are p...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
[[abstract]]The research is based on the nuclear radiation induced soft error phenomenon associated ...
This study analyses the response of synchronous dynamic random access memories to neutron irradiatio...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
International audienceIn previous works, we have demonstrated the importance of dynamic mode testing...