Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems

This paper presents the design, modelling and simulation results of silicon/silicon-germanium ( Si/SiGe) multi-quantum well based bolometer detector for uncooled infrared imaging system. The microbolometer is designed to detect light in the long wave length infrared ( LWIR) range from 8 to 14 mu m with pixel size of 25 x25 mu m. The design optimization strategy leads to achieve the temperature coefficient of resistance ( TCR) 4.5%/K with maximum germanium ( Ge) concentration of 50%. The design of microbolometer entirely relies on standard CMOS and MEMS processes which makes it suitable candidate for commercial infrared imaging systems