Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics

We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from 300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (23%.United States. Dept. of Energy (Contract DE-EE0005314)National Science Foundation (U.S.) (United States. Dept. of Energy NSF CA EEC-1041895)American Society for Engineering Education. National Defense Science and Engineering Graduate FellowshipAlexander von Humboldt-Stiftung (Feodor Lynen Postdoctoral Fellowship