Thesis: S.M., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2014.Cataloged from PDF version of thesis.Includes bibliographical references (pages 55-61).Semiconductor nanostructures exhibit distinct properties by virtue of nano-scale dimensionality, resulting in recent interest in semiconducting nanowires for electronic, photonic, and energy applications. Along with nanowires, quantum dots are solution-processable nanocrystals with tunable band gap energies as a function of their size. Based on all of these promising properties that nanostructures exhibit, nanowires and quantum dots are excellent candidates for next-generation optoelectronic devices, including solar cells and light-emitting diodes. H...
A hybrid, nanostructured solar cell architecture has been designed, described, fabricated and charac...
Nanotechnology comprises of the understanding and control of materials and processes at the nanoscal...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...
In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense a...
We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO ...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
DoctorAlthough human beings has been growing steadily owing to fossil energy, much attention has bee...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a criti...
International audienceAs an abundant and non-toxic wide band gap semiconductor with a high electron ...
The use of zinc oxide (ZnO) nanowires improves charge collection, and consequently power conversion ...
A hybrid, nanostructured solar cell architecture has been designed, described, fabricated and charac...
Nanotechnology comprises of the understanding and control of materials and processes at the nanoscal...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...
In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense a...
We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO ...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
International audienceNanostructuration of solar cells is an interesting approach to improve the pho...
DoctorAlthough human beings has been growing steadily owing to fossil energy, much attention has bee...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a criti...
International audienceAs an abundant and non-toxic wide band gap semiconductor with a high electron ...
The use of zinc oxide (ZnO) nanowires improves charge collection, and consequently power conversion ...
A hybrid, nanostructured solar cell architecture has been designed, described, fabricated and charac...
Nanotechnology comprises of the understanding and control of materials and processes at the nanoscal...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...