Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2013.Cataloged from PDF version of thesis.Includes bibliographical references (pages 117-122).Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the best material to be chosen for each application, enabling new functionalities with the potential of additional miniaturization on a system level. Integration of GaAsP alloys on Si substrates would enable the creation of high efficiency dual-junction solar cells on low cost and light weight Si wafers and would also enable a path fo...
III-V material solar cell on Si substrate has drawn a considerable amount of research interest due t...
International audienceGaAsPN semiconductors are promising material for the development of high-effic...
A range of high performance minority carrier devices have been successfully fabricated on Si virtual...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
The epitaxial integration of high quality III-V semiconductors with Si is of fundamental interest fo...
III-V solar cells are well known for the world record efficiencies in photovoltaic field. Integratin...
Crystalline silicon remains the dominant technology of the existing commercial solar energy market a...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
The use of compositionally graded SiGe buffers to bridge material mismatches between GaAs based III-...
The GaAsP/SiGe tandem solar cell grown directly on Si has the potential for high efficiency at relat...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
A range of high performance minority carrier devices have been successfully fabricated on Si virtual...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
III-V material solar cell on Si substrate has drawn a considerable amount of research interest due t...
International audienceGaAsPN semiconductors are promising material for the development of high-effic...
A range of high performance minority carrier devices have been successfully fabricated on Si virtual...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
The epitaxial integration of high quality III-V semiconductors with Si is of fundamental interest fo...
III-V solar cells are well known for the world record efficiencies in photovoltaic field. Integratin...
Crystalline silicon remains the dominant technology of the existing commercial solar energy market a...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
The use of compositionally graded SiGe buffers to bridge material mismatches between GaAs based III-...
The GaAsP/SiGe tandem solar cell grown directly on Si has the potential for high efficiency at relat...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
A range of high performance minority carrier devices have been successfully fabricated on Si virtual...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
International audienceIII-V compound semiconductors and SiGe alloys can be combined to develop multi...
III-V material solar cell on Si substrate has drawn a considerable amount of research interest due t...
International audienceGaAsPN semiconductors are promising material for the development of high-effic...
A range of high performance minority carrier devices have been successfully fabricated on Si virtual...