Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is δ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter δ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that δ is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip scattering probabilities for flat and rough Cu/Pd interfaces using the L...
The discontinuity of a spin-current through an interface caused by spin-orbit coupling is characteri...
We present multiscale calculations to describe the spin transport behavior of the Co/Cu bilayer stru...
We have measured the concentration dependence of the transmission conduction electron spin resonance...
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at ...
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at ...
Spin transport at metallic interfaces is an essential ingredient of various spintronic device concep...
Because future logic, storage, sensing and energy harvesting devices will approach the nanoscale whe...
We study spin transport through a normal metal-spin superconductor junction. A spin-flip reflection ...
Symmetry lowering at an interface leads to an enhancement of the effect of spin-orbit coupling and t...
We formulate a generalized scattering field theory à la Büttiker describing particles transport in...
Resumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintro...
Various predictions of a complete theory for spin flip scattering of conduction electrons in a binar...
First-principles scattering calculations are used to investigate spin transport through interfaces b...
International audienceWe measure the spin-charge interconversion by the spin Hall effect in various ...
Details are presented of an efficient formalism for calculating transmission and reflection matrices...
The discontinuity of a spin-current through an interface caused by spin-orbit coupling is characteri...
We present multiscale calculations to describe the spin transport behavior of the Co/Cu bilayer stru...
We have measured the concentration dependence of the transmission conduction electron spin resonance...
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at ...
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at ...
Spin transport at metallic interfaces is an essential ingredient of various spintronic device concep...
Because future logic, storage, sensing and energy harvesting devices will approach the nanoscale whe...
We study spin transport through a normal metal-spin superconductor junction. A spin-flip reflection ...
Symmetry lowering at an interface leads to an enhancement of the effect of spin-orbit coupling and t...
We formulate a generalized scattering field theory à la Büttiker describing particles transport in...
Resumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintro...
Various predictions of a complete theory for spin flip scattering of conduction electrons in a binar...
First-principles scattering calculations are used to investigate spin transport through interfaces b...
International audienceWe measure the spin-charge interconversion by the spin Hall effect in various ...
Details are presented of an efficient formalism for calculating transmission and reflection matrices...
The discontinuity of a spin-current through an interface caused by spin-orbit coupling is characteri...
We present multiscale calculations to describe the spin transport behavior of the Co/Cu bilayer stru...
We have measured the concentration dependence of the transmission conduction electron spin resonance...