Impact of nanostructure on polymer-based nonvolatile memory devices

Memory functionality is essential for many high-end electronic applications (e.g., smart phones, personal computers). Particularly, organic nonvolatile memory devices based on polymer ferroelectric materials are a promising approach toward the development of low-cost memory due to the ease of processing and flexibility associated with the device. Here, we will focus on a memory device with a two-component active layer and a diode structure. This ferroelectric diode (FeD) has a nanostructured active layer, composed of ferroelectric and semiconducting polymers, and it can provide easy access to high-performance polymer-based memory devices. In order to create these nanostructured active layers, we have utilized a conventional lithographic technique, electron beam (e-beam) lithography. This lithographic technique allows for the simple fabrication of a desired pattern on the ferroelectric polymer layer. Specifically, to make a well-structured pattern, a ferroelectric polymer layer was etched with a mask. Then, a semiconducting polymer was deposited into the nanoporous ferroelectric layer to complete the ordered heterojunction. By optimizing the nanostructure, the performance of FeD is greatly enhanced over a traditional blended diode. This ability to control ferroelectric polymer morphology will open new fields of studying in the relationships between structure and performance in organic memory devices