Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics
- Jariwala, Deep
- Davoyan, Artur R.
- Tagliabue, Giulia
- Sherrott, Michelle C.
- Wong, Joeson
- Atwater, Harry A.
Publication date
September 2016
DOI Publisher
American Chemical Society (ACS) ISSN
1530-6984 Citation count (estimate)
26Abstract
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency
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