Amorphization and reconstruction of pd-implanted oxide films on titanium

Implantation of Pd ions into oxide films on titanium produces defects which cause an increase of the dielectric constant D as well as electronic conductivity. SEM and TEM show that the grain structure of the oxide grown epitaxially will be diminishec completely by the implanted high energetic ions. HEED demonstrates the amorphousness of the film aftei implantation. Anodic polarization (repassivation) causes a decrease of D and Defects are partially annihilated by increasing repassivation potential. An additional oxide grows at the interfaces of the passive layer. SEM, TEM and HEED show that a reconstruction during repassivation takes place. This gives information on the oxide growth determined by the interface metal/oxide. Recrystallization of the oxide film and formation of catalyzing states by Pd-enrichment at the surface during repassivation are observed at intermediate potentials by electrochemical measurements. The analytical techniques confirm then the hypothesis introduced to explain the electrochemical measurements. Key words: ion implantation, thin films, crystal structure, electrochemistry, amorphization, reconstruction. © 1990, Taylor & Francis Group, LLC. All rights reserved.SCOPUS: ar.jSCOPUS: ar.j