The sublimation of hexagonal SiC has been studied under equilibrium conditions. The predominant gaseous species above SiC are Si, SiC2, and Si2C. By combining the heat of formation of gaseous Si from solid SiC and the known standard heat of formation of SiC, a value of 113 kcal/g atom is obtained for the heat of sublimation of Si at 298°K. From the measured partial pressures, using estimated free energy functions, dissociation energies for Si2, Si3, SiC, SiC2, Si2C, Si2C2, Si2C3, and Si3C are calculated and compared with previously known dissociation energies for group IV B molecules.SCOPUS: ar.jinfo:eu-repo/semantics/publishe
The possibility of using biomass as a precursor of silicon carbide (SiC) has been studied for many y...
As an adjunct to the development of epitaxial programs several invest igators have reported upon the...
Silicon carbide (SiC) is a well known material, but there are still several aspects in its manufactu...
International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and...
The study of any set of compounds proceeds in many diffuse directions influenced by what is already ...
CH3SiCl3 (methyltrichlorosilane) (MTS) is one of the most important precursors for manufacturing bot...
Rate coefficients for radiative association of silicon and carbon atoms to form silicon carbide mole...
© 2022 Elsevier LtdThermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems were perform...
Des résultats de la modélisation de l'équilibre thermodynamique de différents systèmes sont présenté...
Equilibrium calculations are reported for a range of conditions used to deposit silicon carbide (SIC...
The modeling of the growth of silicon carbide from the vapor phase in the Si-C-H system requires a g...
The phase relationship between 3C- and 6H-SiC is investigated in the pressure range 2.5–6.5 GPa and ...
International audienceOxidation studies of SiC are reviewed and analyzed in terms of thermodynamics ...
The growth of certain SiC polytypes in the molecular beam epitaxy (MBE) was analysed within the fram...
The publication costs of this article have been assisted by Dow Coming Corporation. The partial pres...
The possibility of using biomass as a precursor of silicon carbide (SiC) has been studied for many y...
As an adjunct to the development of epitaxial programs several invest igators have reported upon the...
Silicon carbide (SiC) is a well known material, but there are still several aspects in its manufactu...
International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and...
The study of any set of compounds proceeds in many diffuse directions influenced by what is already ...
CH3SiCl3 (methyltrichlorosilane) (MTS) is one of the most important precursors for manufacturing bot...
Rate coefficients for radiative association of silicon and carbon atoms to form silicon carbide mole...
© 2022 Elsevier LtdThermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems were perform...
Des résultats de la modélisation de l'équilibre thermodynamique de différents systèmes sont présenté...
Equilibrium calculations are reported for a range of conditions used to deposit silicon carbide (SIC...
The modeling of the growth of silicon carbide from the vapor phase in the Si-C-H system requires a g...
The phase relationship between 3C- and 6H-SiC is investigated in the pressure range 2.5–6.5 GPa and ...
International audienceOxidation studies of SiC are reviewed and analyzed in terms of thermodynamics ...
The growth of certain SiC polytypes in the molecular beam epitaxy (MBE) was analysed within the fram...
The publication costs of this article have been assisted by Dow Coming Corporation. The partial pres...
The possibility of using biomass as a precursor of silicon carbide (SiC) has been studied for many y...
As an adjunct to the development of epitaxial programs several invest igators have reported upon the...
Silicon carbide (SiC) is a well known material, but there are still several aspects in its manufactu...