Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- Miao, Feng
- Strachan, John
- Yang, Jianhua
- Zhang, M
- Goldfarb, Ilan
- Torrezan, Antonio
- Eschbach, Peter
- Kelley, Ronald
- Medeiros-Ribeiro, Gilberto
- Williams, R Stanley
Publication date
November 2011
DOI Publisher
ScholarWorks@UMass Amherst ISSN
0935-9648 Citation count (estimate)
204Abstract
By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism
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