Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼10(12) inch(-2)). We systematically show that these devices allow...
peer reviewedMemristive devices based on mixed ionic-electronic resistive switches have an enormous ...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Reducing transistor dimensions cannot sustain the growing demand for better technology. To reduce th...
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer ener...
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer ener...
This thesis presents studies on engineering the electrical and magnetic properties in oxide thin fil...
Nanoscale resistive switches (ReRAMs) were recently proposed as new class of non-volatile memories b...
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-sw...
A macro-scale metal–semiconductor–metal device comprising CeO2 nanoparticles cast from a suspension ...
Resistive random access memories (RRAMs) based on metal oxide thin films have unique advantages over...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Emulation of neural networks by redox-based Resistive Random Access Memories (ReRAMs) with component...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
peer reviewedMemristive devices based on mixed ionic-electronic resistive switches have an enormous ...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Reducing transistor dimensions cannot sustain the growing demand for better technology. To reduce th...
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer ener...
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer ener...
This thesis presents studies on engineering the electrical and magnetic properties in oxide thin fil...
Nanoscale resistive switches (ReRAMs) were recently proposed as new class of non-volatile memories b...
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-sw...
A macro-scale metal–semiconductor–metal device comprising CeO2 nanoparticles cast from a suspension ...
Resistive random access memories (RRAMs) based on metal oxide thin films have unique advantages over...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Emulation of neural networks by redox-based Resistive Random Access Memories (ReRAMs) with component...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
peer reviewedMemristive devices based on mixed ionic-electronic resistive switches have an enormous ...
Memristive systems emerge as strong candidates for the implementation of resistive random access mem...
Reducing transistor dimensions cannot sustain the growing demand for better technology. To reduce th...