Thesis (Ph.D.), Department of Physics and Astronomy, Washington State UniversityDefects in ZnO nanocrystals were investigated. While ZnO has potential for optoelectronic applications, the lack reliable p-type doping remains a major challenge. We provide evidence that ZnO nanocrystals contain uncompensated acceptors. IR absorption peaks at liquid-helium temperatures suggest a hydrogenic acceptor with a hole binding energy of 0.4 0.5 eV. Electron paramagnetic resonance (EPR) measurements in the dark showed a resonance at g = 2.003, characteristic of acceptors that involve a zinc vacancy. An EPR resonance due to vacancy hydrogen complexes was observed after exposure to light.Using infrared (IR) and photoluminescence (PL) spectroscopy, we have ...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
ZnO quantum dots with relatively narrow size distribution were produced by the presented precipitati...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
Defects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by pho...
As a material whose applications are many and growing, zinc oxide still remains a complex system who...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
© 2015 WILEY-VCH Verlag GmbH & Co. Zinc oxide (ZnO) nanoparticles have recently been identified as a...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Nanocrystalline ZnO particles were prepared using the high-energy ball milling technique and investi...
Nanocrystalline ZnO particles were prepared using the high-energy ball milling technique and investi...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
ZnO quantum dots with relatively narrow size distribution were produced by the presented precipitati...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
Defects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by pho...
As a material whose applications are many and growing, zinc oxide still remains a complex system who...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
© 2015 WILEY-VCH Verlag GmbH & Co. Zinc oxide (ZnO) nanoparticles have recently been identified as a...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Nanocrystalline ZnO particles were prepared using the high-energy ball milling technique and investi...
Nanocrystalline ZnO particles were prepared using the high-energy ball milling technique and investi...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material with many promising properties for...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...