In this work, multiple effects of γ-ray irradiation on properties of bulk Ge–As–Se chalcogenide glasses were studied. Increased density (ρ), thermal expansion coefficient (α) and decreased optical band gap (Eopt) were observed after irradiation, depending on glass compositions. Glasses with stoichiometric (GeSe2)100−x(As2Se3)x compositions showed linear correlations between As2Se3 proportion x and irradiation sensitivity, which is expressed by Δρ/ρ, Δα/α and ΔEopt/Eopt. Nonstoichiometric glasses (Ge2Se3)100−x(As2Se3)x exhibited irregular variations. The phenomena are discussed in terms of chemical bonds transition and structural evolution under γ-ray irradiation
International audienceIt is shown that the photostructural changes introduced during irradiation of ...
Research on phase change materials is predominantly focused on their application as memory devices o...
Bulk glasses having the compositions As42S58, As36Sb6S58, and As36Ge6S58 have been irradiated at 800...
International audienceIn this work, multiple effects of γ-ray irradiation on properties of bulk Ge-A...
In the present work γ-irradiation induced optical band gap variations (ΔEopt) were investigated on G...
Gamma radiation is known to induce changes in physical, opti-cal, and structural properties in chalc...
γ-irradiation were carried out on Ge-As-S glasses belonging to two different lines of the glass-form...
Changes of optical transmittance induced by the influence of 60Co γ-irradiation have been studied in...
The original experimental results on the study of structural modification of chalcogenide glasses by...
© 2016 Elsevier Inc. All rights reserved.A review of recent results on the structural modification o...
This work focuses on the study of Ge rich phases in the Ge–Se chalcogenide glass system. Radiation i...
High-energy (2Mev) electron irradiation may produce excess density of valence-alternation pairs (VAP...
The effect of electron-irradiation on the optical and refractometric properties of As2S3 chalcogenid...
The influence of chemical composition on the peculiarities of radiation-induced effects in chalcogen...
Bulk glasses having the compositions As42S58, As36Sb6S58, and As36Ge6S58 have been irradiated at 800...
International audienceIt is shown that the photostructural changes introduced during irradiation of ...
Research on phase change materials is predominantly focused on their application as memory devices o...
Bulk glasses having the compositions As42S58, As36Sb6S58, and As36Ge6S58 have been irradiated at 800...
International audienceIn this work, multiple effects of γ-ray irradiation on properties of bulk Ge-A...
In the present work γ-irradiation induced optical band gap variations (ΔEopt) were investigated on G...
Gamma radiation is known to induce changes in physical, opti-cal, and structural properties in chalc...
γ-irradiation were carried out on Ge-As-S glasses belonging to two different lines of the glass-form...
Changes of optical transmittance induced by the influence of 60Co γ-irradiation have been studied in...
The original experimental results on the study of structural modification of chalcogenide glasses by...
© 2016 Elsevier Inc. All rights reserved.A review of recent results on the structural modification o...
This work focuses on the study of Ge rich phases in the Ge–Se chalcogenide glass system. Radiation i...
High-energy (2Mev) electron irradiation may produce excess density of valence-alternation pairs (VAP...
The effect of electron-irradiation on the optical and refractometric properties of As2S3 chalcogenid...
The influence of chemical composition on the peculiarities of radiation-induced effects in chalcogen...
Bulk glasses having the compositions As42S58, As36Sb6S58, and As36Ge6S58 have been irradiated at 800...
International audienceIt is shown that the photostructural changes introduced during irradiation of ...
Research on phase change materials is predominantly focused on their application as memory devices o...
Bulk glasses having the compositions As42S58, As36Sb6S58, and As36Ge6S58 have been irradiated at 800...