Thin film cuprous oxide solar cells

Cuprous oxide films can be prepared by thermal oxidation of copper at 1010°c. These films form Schottky barrier junctions with promising photovoltaic properties. Photovoltaic conversion efficiencies are currently less than 1% but theory indicates that up to 10% efficiency may be achievable. Studies are reported of the physical, chemical, electrical and optical properties of these films. These studies reveal that the present low efficiencies are primarily due to high resistivity of the films and excessive thickness. Possible ways of overcoming these difficulties are discussed