Identification of carbon-hydrogen complexes in n- and p-type silicon

The origin of several deep traps E42, E90, E262, and H180 in hydrogenated n -type and p -type FZ and CZ Si is investigated. Comparing the depth profiles of these defects in samples with different C, O, H, and shallow donor (acceptor) concentrations we conclude that they belong to carbon-hydrogen-related defects consisting of one C and one H atom. The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. From a comparison with earlier calculations we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH1AB complex. In good agreement with the results of previous studies E90 is assigned to the acceptor state of the CH1BC complex. Our preliminary Laplace DLTS studies on SiGe with a Ge content