The specific local alignment of the magnetization of a reference layer in spin valves has a rapidly growing significance in the implementation of monolithically integrated sensor devices. The spatial sensitivity of such sensors is defined by the exchange bias effect arising in strongly coupled ferromagnetic (FM) and antiferromagnetic (AFM) heterostructures. The (re-)setting of the orientation of the exchange bias direction can be achieved through local annealing by means of a focused laser beam and subsequent cooling in the presence of a magnetic field. The parameters of such a laser exposure will have a significant influence to the FM/AFM system as well as the remaining layers, playing therefore an important role on the sensing characteris...
Spin valve (SV) devices are composed by two magnetic (FM) regions separated by a nonmagnetic region:...
Vast resources are being devoted to the optimization of data recording and storage, this project aim...
AbstractWe report on selective realignment of the exchange biased magnetization direction in spintro...
AbstractThe specific local alignment of the magnetization of a reference layer in spin valves has a ...
A contact-less sensor with the ability to measure over a 360° range has been long sought after in th...
In the recent past conventional Spin Valve (SV) structures are gaining growing interest over Tunneli...
We have designed and fabricated 2D GMR spin valve sensors on the basis of IrMn/CoFe/Cu/CoFe/NiFe nan...
The magnetoresistive properties of pinned spin valves (SV) and their roles in low-field sensing appl...
The performance of exchanged biased tunnel junctions strongly relies on the annealing process finali...
We have designed and fabricated 2-D giant magnetoresistance spin-valve sensors on the basis of excha...
This dissertation describes an experimental study on the patterning of thin films and spin valve dev...
An in situ magnetoresistance test rig has been designed and built into an argon ion milling rig. The...
The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to s...
We investigate the magnetoresistance (MR) of spin valves by (i) varying the strength of the field ap...
Abstract—The magnetoresistance of IrMn based spin valve sheet films has been measured as a function ...
Spin valve (SV) devices are composed by two magnetic (FM) regions separated by a nonmagnetic region:...
Vast resources are being devoted to the optimization of data recording and storage, this project aim...
AbstractWe report on selective realignment of the exchange biased magnetization direction in spintro...
AbstractThe specific local alignment of the magnetization of a reference layer in spin valves has a ...
A contact-less sensor with the ability to measure over a 360° range has been long sought after in th...
In the recent past conventional Spin Valve (SV) structures are gaining growing interest over Tunneli...
We have designed and fabricated 2D GMR spin valve sensors on the basis of IrMn/CoFe/Cu/CoFe/NiFe nan...
The magnetoresistive properties of pinned spin valves (SV) and their roles in low-field sensing appl...
The performance of exchanged biased tunnel junctions strongly relies on the annealing process finali...
We have designed and fabricated 2-D giant magnetoresistance spin-valve sensors on the basis of excha...
This dissertation describes an experimental study on the patterning of thin films and spin valve dev...
An in situ magnetoresistance test rig has been designed and built into an argon ion milling rig. The...
The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to s...
We investigate the magnetoresistance (MR) of spin valves by (i) varying the strength of the field ap...
Abstract—The magnetoresistance of IrMn based spin valve sheet films has been measured as a function ...
Spin valve (SV) devices are composed by two magnetic (FM) regions separated by a nonmagnetic region:...
Vast resources are being devoted to the optimization of data recording and storage, this project aim...
AbstractWe report on selective realignment of the exchange biased magnetization direction in spintro...