Add to ORKGWe show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology ...
Single event effect data is presented on the Analog Devices AD7984. The recent heavy-ion test result...
Abstract We present both proton and heavy ion single event effect (SEE) ground test results for cand...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
We present results for the single-event effect response of commercial production-level resistive ran...
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4...
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4...
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Ra...
This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independen...
We investigated the heavy ion single-event effect (SEE) susceptibility of the industrys first stand-...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
We present the results of single events effects (SEE) testing and analysis investigating the effects...
Microprocessor, Graphics Processing Units (GPUs) and DDRx memory devices have emerged as promising n...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
Microsemi (Microchip) RTG4 embedded triple modular redundant (TMR) phase-locked-loop (PLL) SEU data ...
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology ...
Single event effect data is presented on the Analog Devices AD7984. The recent heavy-ion test result...
Abstract We present both proton and heavy ion single event effect (SEE) ground test results for cand...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
We present results for the single-event effect response of commercial production-level resistive ran...
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4...
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4...
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Ra...
This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independen...
We investigated the heavy ion single-event effect (SEE) susceptibility of the industrys first stand-...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
We present the results of single events effects (SEE) testing and analysis investigating the effects...
Microprocessor, Graphics Processing Units (GPUs) and DDRx memory devices have emerged as promising n...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
Microsemi (Microchip) RTG4 embedded triple modular redundant (TMR) phase-locked-loop (PLL) SEU data ...
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology ...
Single event effect data is presented on the Analog Devices AD7984. The recent heavy-ion test result...
Abstract We present both proton and heavy ion single event effect (SEE) ground test results for cand...