Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at: http://scitation.aip.org/content/avs/journal/jvsta.Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O\ud at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were\ud analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution\ud transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films\ud deposited at 150°C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm³,\ud band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a\ud (201) preferred crystal orientation. Deposition temperatures above 210°C and postdeposition\ud anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased\ud interfacial roughness, and degraded optical properties