Add to ORKGThis technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and highlights the difference in etch properties between small (~10 micron) and large (~500 micron) features
The following paper describes a design of experiments investigation of the deep reactive of pillar s...
This thesis focuses on cryogenic deep reactive ion etching (DRIE) and presents how it can be applied...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and hig...
This technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 re...
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10 μm wide to a ...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
The ability to predict and control the influence of process parameters during silicon etching is vit...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
The DoD requires a variety of COTS and number of custom microelectronics to provide important functi...
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
Deep reactive-ion etching is an important process in the fabrication of microelectromechanical syste...
A laser-based method for measuring feature thickness during the deep reactive ion etching process is...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
The following paper describes a design of experiments investigation of the deep reactive of pillar s...
This thesis focuses on cryogenic deep reactive ion etching (DRIE) and presents how it can be applied...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and hig...
This technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 re...
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10 μm wide to a ...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
The ability to predict and control the influence of process parameters during silicon etching is vit...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
The DoD requires a variety of COTS and number of custom microelectronics to provide important functi...
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
Deep reactive-ion etching is an important process in the fabrication of microelectromechanical syste...
A laser-based method for measuring feature thickness during the deep reactive ion etching process is...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
The following paper describes a design of experiments investigation of the deep reactive of pillar s...
This thesis focuses on cryogenic deep reactive ion etching (DRIE) and presents how it can be applied...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...