Add to ORKGThe mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substit...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3...
This technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 re...
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between ...
A silicon nitride plasma etch process with good nitride-to-oxide selectivity has been developed at R...
A study was performed on the etch characteristics of silicon dioxide and polysilicon for a reactive ...
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and hig...
The TRION III etch tool enables us to do a more anisotropic etching of necessary layers such as Nitr...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
In advanced microelectronic device fabrications, novel gate electrode designs for field effect trans...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substit...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3...
This technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 re...
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between ...
A silicon nitride plasma etch process with good nitride-to-oxide selectivity has been developed at R...
A study was performed on the etch characteristics of silicon dioxide and polysilicon for a reactive ...
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and hig...
The TRION III etch tool enables us to do a more anisotropic etching of necessary layers such as Nitr...
An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samp...
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro m...
In advanced microelectronic device fabrications, novel gate electrode designs for field effect trans...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substit...
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process...