Transient grating (TG) scattering and second harmonic generation (SHG) were used to study dynamical and structural properties of semiconductors and molecular thin films on metal surfaces. In the first part of this dissertation, the dynamics of photoexcited carriers generated near a silicon surface were studied on femtosecond timescales using transient grating scattering in a reflection configuration. Experiments were conducted to study both carrier concentration and orientation gratings. In the concentration grating study, the lifetime for hot carrier relaxation for electrons excited 1.4 ± 0.6 eV above the conduction bandedge and their corresponding holes was determined to be 240 fs at carrier densities below 1020 cm–3 . At carrier densitie...
CITATION: Scheidt, T., et al. 2005. Femtosecond laser diagnostics of thin films, surfaces and interf...
An aluminum-doped p-type polycrystalline silicon film was fabricated on a glass substrate using magn...
The transient permittivity of dielectrics and semiconductors excited by a powerful ultrashort laser ...
Second Harmonic Generation (SHG) and Transient Grating Scattering (TGS) techniques are used to study...
Thesis (Ph.D.), Department of Physics and Astronomy, Washington State UniversityThis dissertation pr...
Ultrafast carrier dynamics in silicon nanowires with average diameters of 40, 50, 60, and 100 nm wer...
The ultrafast carrier dynamics of semiconductor surfaces on a sub-picosecond time scale has become a...
We study, experimentally and theoretically, the carrier dynamics in high quality silicon on glass sa...
We have studied the ultrafast optical response of native-oxide terminated Si(001) with pump-probe r...
Abstract We investigate the ultrafast dynamics of carriers in a silicon nanostructure by performing ...
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of...
We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafa...
We present experimental and theoretical studies that regards in the formulation of a reflectance mod...
A surface-sensitive purely optical technique is demonstrated for the investigation of ultrafast rela...
Time-resolved reflectivity measurements within ~100 fs resolution have revealed an initial 350 fs re...
CITATION: Scheidt, T., et al. 2005. Femtosecond laser diagnostics of thin films, surfaces and interf...
An aluminum-doped p-type polycrystalline silicon film was fabricated on a glass substrate using magn...
The transient permittivity of dielectrics and semiconductors excited by a powerful ultrashort laser ...
Second Harmonic Generation (SHG) and Transient Grating Scattering (TGS) techniques are used to study...
Thesis (Ph.D.), Department of Physics and Astronomy, Washington State UniversityThis dissertation pr...
Ultrafast carrier dynamics in silicon nanowires with average diameters of 40, 50, 60, and 100 nm wer...
The ultrafast carrier dynamics of semiconductor surfaces on a sub-picosecond time scale has become a...
We study, experimentally and theoretically, the carrier dynamics in high quality silicon on glass sa...
We have studied the ultrafast optical response of native-oxide terminated Si(001) with pump-probe r...
Abstract We investigate the ultrafast dynamics of carriers in a silicon nanostructure by performing ...
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of...
We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafa...
We present experimental and theoretical studies that regards in the formulation of a reflectance mod...
A surface-sensitive purely optical technique is demonstrated for the investigation of ultrafast rela...
Time-resolved reflectivity measurements within ~100 fs resolution have revealed an initial 350 fs re...
CITATION: Scheidt, T., et al. 2005. Femtosecond laser diagnostics of thin films, surfaces and interf...
An aluminum-doped p-type polycrystalline silicon film was fabricated on a glass substrate using magn...
The transient permittivity of dielectrics and semiconductors excited by a powerful ultrashort laser ...