The effects of a quantum wire intermediate band, grown by molecular beam epitaxy, on the optical and electrical properties of solar cells are reported. To investigate the behavior of the intermediate band, the quantum wires were remotely doped at three different doping concentrations, the number of quantum wire layers was varied from three to twenty, and the solar cell structure was optimized. For all the structures, current-voltage and external quantum efficiency measurements were performed to examine the effect of absorption and power conversion of the intermediate band solar cell (IBSC). Time-resolved photoluminescence measurements showed that δ-doping can increase the lifetime of the excited electrons in the quantum wires. The quantum e...
The goal of this thesis is to understand possible mechanisms for the reported decrease of the open c...
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating a...
We report the effect of the quantum dot aspect ratio on the sub-gap absorption properties of GaAs/Al...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
Renewable energy sources are becoming increasingly more vital as the supply of fossil fuels is deple...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
In order for photovoltaic energy conversion to compete with conventional energy sources and become a...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The intermediate-band solar cell is designed to provide a large photogenerated current while maintai...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
There is considerable interest in the development of high efficiency cost-effective solar cells for ...
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating a...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The goal of this thesis is to understand possible mechanisms for the reported decrease of the open c...
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating a...
We report the effect of the quantum dot aspect ratio on the sub-gap absorption properties of GaAs/Al...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
Renewable energy sources are becoming increasingly more vital as the supply of fossil fuels is deple...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
In order for photovoltaic energy conversion to compete with conventional energy sources and become a...
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam ...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The intermediate-band solar cell is designed to provide a large photogenerated current while maintai...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
There is considerable interest in the development of high efficiency cost-effective solar cells for ...
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating a...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The goal of this thesis is to understand possible mechanisms for the reported decrease of the open c...
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating a...
We report the effect of the quantum dot aspect ratio on the sub-gap absorption properties of GaAs/Al...